Semiconductor tool having controllable ambient environment processing zones

ABSTRACT

In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first processing zone having a first ambient environment and a second processing zone having a second ambient environment disposed at different location inside a processing chamber. A first exhaust port and a second exhaust port are disposed in the first and second processing zones, respectively. A first exhaust pipe couples the first exhaust port to a first individual exhaust output. A second exhaust pipe couples the second exhaust port to a second individual exhaust output, where the second exhaust pipe is separate from the first exhaust pipe. A first adjustable fluid control element controls the first ambient environment. A second adjustable fluid control element controls the second ambient environment, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.

REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. application Ser. No. 16/352,227, filed on Mar. 13, 2019, which claims the benefit of U.S. Provisional Application No. 62/752,746, filed on Oct. 30, 2018. The contents of the above-referenced patent applications are hereby incorporated by reference in their entirety.

BACKGROUND

Integrated circuits (ICs) are formed by complex fabrication processes, such as sol-gel deposition. During sol-gel deposition, a semiconductor workpiece (e.g., a semiconductor wafer) may be subjected to different processing steps. Some of the processing steps may comprise preparing a sol-gel solution (e.g., a colloidal solution), depositing the sol-gel solution onto the semiconductor workpiece (e.g., via a spin-on process), pyrolyzing the sol-gel solution (e.g., via a baking process) to form a gel layer on the semiconductor workpiece, and crystallizing the gel layer (e.g., via an anneal process) to form a sol-gel layer on the semiconductor workpiece. Specialized fabrication tools are needed to perform these processing steps.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 illustrates a view of some embodiments of a semiconductor fabrication tool configured to control an ambient environment at a plurality of processing zones disposed inside a processing chamber.

FIG. 2 illustrates a perspective view of some more detailed embodiments of a region of the processing chamber of FIG. 1 in which the second processing zone is disposed.

FIG. 3 illustrates a view of some other embodiments of the semiconductor fabrication tool of FIG. 1.

FIG. 4 illustrates a view of some other embodiments of the semiconductor fabrication tool of FIG. 1.

FIG. 5 illustrates a view of some other embodiments of the semiconductor fabrication tool of FIG. 1.

FIG. 6 illustrates a view of some other embodiments of the semiconductor fabrication tool of FIG. 4.

FIG. 7 illustrates a flowchart of some embodiments of a method for forming a plurality of layers on a plurality of semiconductor workpieces, respectively, with the semiconductor fabrication tool of FIG. 6.

DETAILED DESCRIPTION

The present disclosure will now be described with reference to the drawings wherein like reference numerals are used to refer to like elements throughout, and wherein the illustrated structures are not necessarily drawn to scale. It will be appreciated that this detailed description and the corresponding figures do not limit the scope of the present disclosure in any way, and that the detailed description and figures merely provide a few examples to illustrate some ways in which the inventive concepts can manifest themselves.

The present disclosure provides many different embodiments, or examples, for implementing different features of this disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

Some integrated chips (ICs) comprise a piezoelectric device. The piezoelectric device comprises a piezoelectric layer that is configured to generate an electric charge in response to a change in a shape of the piezoelectric structure layer, or vice versa. One method to form the piezoelectric layer is a sol-gel process. The sol-gel process may include depositing a sol-gel solution onto a semiconductor workpiece, pyrolyzing the sol-gel solution on the semiconductor workpiece (e.g., via a baking process), and crystallizing the sol-gel solution on the semiconductor workpiece (e.g., via an anneal process). To pyrolyze the sol-gel solution on the semiconductor workpiece, the semiconductor workpiece is heated in a semiconductor fabrication tool.

Typically, the semiconductor fabrication tool performs the pyrolysis process on a plurality of semiconductor workpieces at a same time. To perform the pyrolysis process on the plurality of semiconductor workpieces, the plurality of semiconductor workpieces are placed on a plurality of heating elements, respectively. The plurality of heating elements are typically disposed in a plurality of processing zones inside the semiconductor fabrication tool, respectively. The plurality of heating elements heat the plurality of semiconductor workpieces, respectively, causing by-products to separate from the sol-gel solution and form a processing fluid (e.g., a gas comprising by-products from the sol-gel pyrolysis process) inside the semiconductor fabrication tool. The semiconductor fabrication tool exhausts the processing fluid through a plurality of exhaust ports, where the plurality of exhaust ports are disposed in the plurality of processing zones, respectively. Generally, the plurality of exhaust ports converge to a single common exhaust output (e.g., via a piping system).

A challenge with the above sol-gel process is controlling an ambient environment (e.g., an amount of sol-gel by-products in the processing fluid) at each of the plurality of processing zones. The semiconductor fabrication tool may not be able to individually control the ambient environment at each of the plurality of processing zones due to the exhaust ports being disposed in the plurality of processing zones and converging to the single common exhaust output. Thus, during the sol-gel process, there may be undesirable variations between the ambient environments of the plurality of processing zones. Accordingly, the varying ambient environments may cause negative effects in the formation of the piezoelectric layers on the plurality of semiconductor workpieces (e.g., permittivity variations between piezoelectric layers formed on different semiconductor workpieces, permittivity variations across a piezoelectric layer formed on a semiconductor workpiece, etc.).

In various embodiments, the present application is directed toward a semiconductor fabrication tool. The semiconductor fabrication tool includes a processing chamber. A first processing zone having a first ambient environment and a second processing zone having a second ambient environment are disposed at different locations inside the processing chamber, where gas-phase particles (e.g., sol-gel by-products) are disposed throughout the first and second ambient environments. A first exhaust port is disposed in the first processing zone. A first exhaust pipe is coupled to the first exhaust port and a first individual exhaust output. A first adjustable fluid control element is configured to control the first ambient environment by adjusting a first fluid flow rate corresponding to a rate in which the gas-phase particles flow through the first exhaust port. A second exhaust port is disposed in the second processing zone. A second exhaust pipe is coupled to the second exhaust port and a second individual exhaust output. A second adjustable fluid control element is configured to control the second ambient environment by adjusting a second fluid flow rate corresponding to a rate in which the gas-phase particles flow through the second exhaust port, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.

Because the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable, the first ambient environment and the second ambient environment may be independently controlled. Because the first and second ambient environments may be independently controlled, an amount of gas-phase particles in the first ambient environment and an amount of gas-phase particles in the second ambient environment may be substantially the same. Accordingly, fabrication process(es) performed in the semiconductor fabrication tool (e.g., forming a piezoelectric layer via a sol-gel process) may be improved between the first processing zone and second processing zone (e.g., improved permittivity uniformity between the piezoelectric layers formed in the first and second processing zones).

FIG. 1 illustrates a view of some embodiments of a semiconductor fabrication tool 100 configured to control an ambient environment at a plurality of processing zones 104 a-d disposed inside a processing chamber 102.

As shown in FIG. 1, the semiconductor fabrication tool 100 comprises a processing chamber 102. A plurality of processing zones 104 a-d are disposed in the processing chamber 102. For example, in some embodiments, the plurality of processing zones 104 a-d comprise a first processing zone 104 a, a second processing zone 104 b, a third processing zone 104 c, and a fourth processing zone 104 d. In further embodiments, the plurality of processing zones 104 a-d may be stacked vertically in the processing chamber 102. In yet further embodiments, the plurality of processing zones 104 a-d have a plurality of ambient environments 105 a-d, respectively. For example, the first processing zone 104 a has a first ambient environment 105 a, the second processing zone 104 b has a second ambient environment 105 b, the third processing zone 104 c has a third ambient environment 105 c, and the fourth processing zone 104 d has a fourth ambient environment 105 d. In some embodiments, the plurality of ambient environments 105 a-d may be referred to as a plurality of process environments.

The plurality of processing zones 104 a-d comprise a plurality of heating elements 106, respectively. The plurality of heating elements 106 are configured to heat a plurality of semiconductor workpieces 108, respectively. For example, each of the plurality of heating elements 106 are configured to heat one of the plurality of semiconductor workpieces 108 to a processing temperature (e.g., between about 200° C. and 600° C.). In some embodiments, the plurality of heating elements 106 may heat the plurality of semiconductor workpieces 108 by, for example, resistive heating (e.g., passing current through a conductor), water heating (e.g., heating water to an elevated temperature), or the like. In further embodiments, the processing temperature may be about 300° C. In further embodiments, the processing temperature is a sol-gel pyrolysis temperature (e.g., a temperature that pyrolyzes a sol-gel solution).

In some embodiments, the plurality of heating elements 106 are configured to hold the plurality of semiconductor workpieces 108, respectively. Each of the plurality of semiconductor workpieces 108 may be a semiconductor wafer comprising a semiconductor body (e.g., monocrystalline silicon/CMOS bulk, silicon-germanium (SiGe), silicon on insulator (SOI), etc.). In some embodiments, each of the plurality of semiconductor workpieces 108 may be a semiconductor wafer having one or more layers (e.g., an oxide (e.g., silicon dioxide (SiO₂)), a metal (e.g., platinum), a nitride (e.g., silicon nitride (SiN)), an oxy-nitride (e.g., silicon oxy-nitride (SiO_(X)N_(Y))), or the like) disposed on the semiconductor wafer.

One or more exhaust ports 110 are disposed in each of the plurality of processing zones 104 a-d. For example, the first processing zone 104 a may comprise four exhaust ports. In such embodiments, two exhaust ports may be disposed on a first side of the one of the plurality of heating elements 106 of the first processing zone 104 a, and two other exhaust ports may be disposed on a second side of the one of the plurality of heating elements 106 of the first processing zone 104 a opposite the first side.

The one or more exhaust ports 110 comprise openings 112 that provide passages for a processing fluid (not shown) to flow through the one or more exhaust ports 110, respectively, such that the processing fluid exhausts from the plurality of processing zones 104 a-d to a plurality of exhaust tubes 114 a-d, respectively. For example, the one or more exhaust ports 110 of the first processing zone 104 a may be coupled to a first exhaust tube 114 a, such that the processing fluid may exhaust from the first processing zone 104 a to the first exhaust tube 114 a; the one or more exhaust ports 110 of the second processing zone 104 b may be coupled to a second exhaust tube 114 b, such that the processing fluid may exhaust from the second processing zone 104 b to the second exhaust tube 114 b; the one or more exhaust ports 110 of the third processing zone 104 c may be coupled to a third exhaust tube 114 c, such that the processing fluid may exhaust from the third processing zone 104 c to the third exhaust tube 114 c; and the one or more exhaust ports 110 of the fourth processing zone 104 d may be coupled to a fourth exhaust tube 114 d, such that the processing fluid may exhaust from the fourth processing zone 104 d to the fourth exhaust tube 114 d. The processing fluid comprises gas-phase particles (e.g., atoms, molecules, ions) and is disposed throughout the plurality of ambient environments 105 a-d. In some embodiments, the gas-phase particles may be or comprise, for example, sol-gel by-products (e.g., hydrogen, oxygen, carbon, lead, zirconium, titanium, etc.), processing gases (e.g., hydrogen gas), or the like.

The plurality of exhaust tubes 114 a-d couple the one or more exhaust ports 110 of the plurality of processing zones 104 a-d to a plurality of individual exhaust outputs 116 a-d, respectively. For example, the first exhaust tube 114 a couples the one or more exhaust ports 110 of the first processing zone 104 a to a first individual exhaust output 116 a, the second exhaust tube 114 b couples the one or more exhaust ports 110 of the second processing zone 104 b to a second individual exhaust output 116 b, the third exhaust tube 114 c couples the one or more exhaust ports 110 of the third processing zone 104 c to a third individual exhaust output 116 c, and the fourth exhaust tube 114 d couples the one or more exhaust ports 110 of the fourth processing zone 104 d to a fourth individual exhaust output 116 d. In some embodiments, each of the plurality of exhaust tubes 114 a-d are separate from one another. In further embodiments, each of the plurality of individual exhaust outputs 116 a-d are separate from one another.

Each of the plurality of individual exhaust outputs 116 a-d is an area of fluid (e.g., gas) that is discrete from the processing chamber 102. For example, in some embodiments, the individual exhaust outputs 116 a-d are discrete areas of fluid in Earth's atmosphere. In other embodiments, the individual exhaust outputs 116 a-d may be discrete areas of fluid in a piping system that are discrete from the plurality of exhaust tubes 114 a-d (e.g., discrete areas of fluid in the piping system that cannot flow into the processing chamber 102). In yet other embodiments, the individual exhaust outputs 116 a-d may be discrete regions of a vacuum system (e.g., a piping system comprising one or more vacuum pumps).

In some embodiments, each of the plurality of individual exhaust outputs 116 a-d may have a different pressure than a corresponding one of the plurality of processing zones 104 a-d. For example, the first individual exhaust output 116 a may have a lower pressure than the first processing zone 104 a. In further embodiments, a pressure difference between each of the plurality of individual exhaust outputs 116 a-d and its corresponding one of the plurality of processing zones 104 a-d is substantially the same. For example, a pressure difference between the first individual exhaust output 116 a and the first processing zone 104 a may be substantially the same as a pressure difference between the second individual exhaust output 116 b and the second processing zone 104 b, between the third individual exhaust output 116 c and the third processing zone 104 c, and between the fourth individual exhaust output 116 d and the fourth processing zone 104 d. In yet further embodiments, the plurality of exhaust tubes 114 a-d may have substantially similar dimensions (e.g., length, inner diameter, geometry, etc.) and/or properties (e.g., chemical compositions), such that a pressure difference between each of the plurality of individual exhaust outputs 116 a-d and its corresponding one of the plurality of processing zones 104 a-d are substantially the same.

Because the plurality of exhaust tubes 114 a-d are coupled to the plurality of individual exhaust outputs 116 a-d, respectively, and because the plurality of exhaust tubes 114 a-d may have substantially the same dimensions and/or properties, the processing fluid may flow through each of the one or more exhaust ports 110 at substantially the same fluid flow rate. Because the processing fluid may flow through each of the one or more exhaust ports 110 at substantially the same fluid flow rate, the plurality of ambient environments 105 a-d may be substantially the same (e.g., substantially the same amount of processing fluid). Accordingly, fabrication process(es) performed in the semiconductor fabrication tool 100 (e.g., forming a piezoelectric layer via a sol-gel process) may be improved between the plurality of processing zones 104 a-d (e.g., improved permittivity uniformity between piezoelectric layers formed in the plurality of processing zones 104 a-d).

FIG. 2 illustrates a perspective view of some more detailed embodiments of a region 200 of the processing chamber 102 of FIG. 1 (viewed from under the region 200) in which the second processing zone 104 b is disposed. FIG. 2 illustrates the second exhaust tube 114 b as partially transparent. Further, FIG. 2 illustrates the processing chamber 102 in phantom, such that sidewalls 102 s of the processing chamber 102 are illustrated by a first dotted line. In addition, FIG. 2 illustrates a perimeter of one of the plurality of semiconductor workpieces 108 through the one of the plurality of heating elements 106 of the second processing zone 104 b by a second dotted line. It will be appreciated that, in some embodiments, the first processing zone 104 a, the third processing zone 104 c, and the fourth processing zone 104 d may comprise substantially similar features as illustrated in FIG. 2.

As shown in FIG. 2, a hotplate tray 202 comprises one of the plurality of heating elements 106. In such embodiments, the one of the plurality of heating elements 106 may be disposed on a bottom surface of the hotplate tray 202. In further embodiments, a shape of the one of the plurality of heating elements 106 may be, for example, circular, elliptical, rectangular, square, or the like. The hotplate tray 202 may comprise sidewalls that extend vertically from the bottom surface of the hotplate tray 202. In further embodiments, the hotplate tray 202 may also comprise a top surface, such that the bottom surface, the sidewalls, and the top surface of the hotplate tray 202 may form a box-like enclosure around the one of the semiconductor workpieces 108 once the one of the semiconductor workpieces 108 is placed in/on the hotplate tray 202. In further embodiments, the hotplate tray 202 may be removable from the processing chamber 102. In yet further embodiments, the hotplate tray 202 comprises, for example, a metal (e.g., steel), a ceramic (e.g., porcelain), or the like.

A plurality of structural support structures 204 are disposed in the processing chamber 102. In some embodiments, the structural support structures 204 may comprise, for example, a metal (e.g., steel), a plastic (e.g., acrylic), or the like. In further embodiments, sidewalls 102 s of the processing chamber 102 are mounted to the structural support structures 204, or vice versa. The sidewalls 102 s of the processing chamber 102 may comprise, for example, a metal (e.g., steel), a plastic (e.g., acrylic), or the like. It will be appreciated that the sidewalls 102 s of the processing chamber 102 may extend between an upper surface of the processing chamber 102 and a bottom surface of the processing chamber 102, such that the processing chamber 102 encloses the plurality of processing zones 104 a-d (see, e.g., FIG. 1).

A plurality of mounting brackets 206 are disposed on the plurality of structural support structures 204, respectively. The plurality of mounting brackets 206 are configured to support the hotplate tray 202. In some embodiments, the plurality of mounting brackets 206 comprise, for example, a metal (e.g., steel), a ceramic (e.g., porcelain), or the like. In further embodiments, the plurality of mounting brackets 206 are L-shaped.

In some embodiments, the second exhaust tube 114 b is disposed in an exhaust tube housing unit (not shown). The second exhaust tube 114 b may be mounted inside the exhaust tube housing unit. In further embodiments, the exhaust tube housing unit is mounted to the sidewalls 102 s of the processing chamber 102. In some embodiments, the second exhaust tube 114 b may comprise, for example, a metal (e.g., steel), a plastic (e.g., acrylic), or the like. In further embodiments, a cross-sectional geometry of the second exhaust tube 114 b may be, for example, rectangular, square, circular, elliptical, or the like. In yet further embodiments, the exhaust tube housing unit may comprise, for example, a metal (e.g., steel), a plastic (e.g., acrylic), or the like.

In some embodiments, the second exhaust tube 114 b is disposed on opposite sides of the processing chamber 102. For example, a first portion and a second portion of the second exhaust tube 114 b may be disposed on a first side of the processing chamber 102, and a third portion and a fourth portion of the second exhaust tube 114 b may be disposed on a second side of the processing chamber 102 opposite the first side. In further embodiments, the first portion and the second portion of the second exhaust tube 114 b may converge to a fifth portion of the second exhaust tube 114 b, and the third portion and the fourth portion may converge to a sixth portion of the second exhaust tube 114 b. In yet further embodiments, the fifth portion and the sixth portion of the second exhaust tube may converge to a seventh portion of the exhaust tube. In yet further embodiments, the seventh portion of the second exhaust tube 114 b may be coupled to the second individual exhaust output 116 b.

In some embodiments, the one or more exhaust ports 110 in the second processing zone 104 b are disposed on the opposite sides of the processing chamber 102. The one or more exhaust ports 110 in the second processing zone 104 b may be mounted to the exhaust tube housing unit. In further embodiments, a first one, a second one, a third one, and a fourth one of the one or more exhaust ports 110 in the second processing zone 104 b are coupled to the first portion, the second portion, the third portion, and the fourth portion of the second exhaust tube 114 b, respectively. In further embodiments, each of the one or more exhaust ports 110 in the second processing zone 104 b may comprise a hotplate tray locking mechanism (e.g., a spring plunger, button clip, etc.) that engages with a corresponding engaging point disposed on the hotplate tray 202, such that the hotplate tray 202 may lock into the processing chamber 102 at a specific locking location. In yet further embodiments, the one or more exhaust ports 110 may comprise, for example, a metal (e.g., steel), a plastic (e.g., acrylic), or the like.

When the hotplate tray 202 is in the specific locking location, the openings 112 may be aligned with corresponding openings in the hotplate tray 202 and corresponding openings in the second exhaust tube 114 b, respectively, such that the processing fluid may exhaust from the second processing zone 104 b to the second exhaust tube 114 b. In some embodiments, a shape of the openings 112 may be, for example, elliptical, rectangular, square, circular, or the like.

In some embodiments, each of the one or more exhaust ports 110 in the second processing zone 104 b may comprise a sensor mounting element 208. Each of the sensor mounting elements 208 is configured to position a sensor (e.g., a gas flow sensor) in one of the one or more exhaust ports 110 in the second processing zone 104 b. In some embodiments, the sensor mounting elements 208 are orifices that extend from the openings 112 to sidewalls of the one or more exhaust ports 110 disposed in the second processing zone 104 b, respectively. For example, one of the sensor mounting elements 208 may extend from the opening of a first one of the one or more exhaust ports 110 disposed in the second processing one 104 a to a sidewall of the first one of the one or more exhaust ports 110, such that the sensor may be mounted inside the opening of the first one of the one or more exhaust ports 110.

FIG. 3 illustrates a view of some other embodiments of the semiconductor fabrication tool 100 of FIG. 1.

A plurality of fluid control elements 302 a-d are disposed in the plurality of exhaust tubes 114 a-d, respectively. For example, a first fluid control element 302 a is disposed in the first exhaust tube 114 a, a second fluid control element 302 b is disposed in the second exhaust tube 114 b, a third fluid control element 302 c is disposed in the third exhaust tube 114 c, and a fourth fluid control element 302 d is disposed in the fourth exhaust tube 114 d. The plurality of fluid control elements 302 a-d are configured to control the plurality of ambient environments 105 a-d, respectively. In some embodiments, the plurality of fluid control elements 302 a-d control the plurality of ambient environments 105 a-d so that each of the plurality of ambient environments 105 a-d comprise a substantially similar amount of the processing fluid.

In some embodiments, the plurality of fluid control elements 302 a-d control the plurality of ambient environments 105 a-d, respectively, by adjusting fluid flow rates that correspond to rates in which the processing fluid flows through the one or more exhaust ports 110. For example, the first fluid control element 302 a controls the first ambient environment 105 a by adjusting a first fluid flow rate corresponding to a rate in which the processing fluid flows from the first processing zone 104 a through the one or more exhaust ports 110 disposed in the first processing zone 104 a, and the second fluid control element 302 b controls a second fluid flow rate that corresponds to a rate in which the processing fluid flows from the second processing zone 104 b through the one or more exhaust ports 110 disposed in the second processing zone 104 b. In further embodiments, for the plurality of ambient environments 105 a-d to have substantially the same amount of processing fluid, the plurality of fluid control elements 302 a-d may be adjusted so that the fluid flow rates are the same and/or different. For example, all of the fluid flow rates may be the same, all of the fluid flow rates may be different, or some of the fluid flow rates may be the same and some may be different.

In some embodiments, the plurality of fluid control elements 302 a-d control the plurality of ambient environments 105 a-d, respectively, by adjusting the exhaust pressures at the one or more exhaust ports 110. For example, the first fluid control element 302 a controls the first ambient environment 105 a by adjusting the exhaust pressure at the one or more exhaust ports 110 disposed in the first processing zone 104 a, and the second fluid control element 302 b controls the second ambient environment 105 b by adjusting the exhaust pressure at the one or more exhaust ports 110 disposed in the second processing zone 104 b. In further embodiments, for the plurality of ambient environments 105 a-d to have substantially the same amount of processing fluid, the plurality of fluid control elements 302 a-d may be adjusted so that the exhaust pressures are the same and/or different. For example, all of the exhaust pressures may be the same, all of the exhaust pressures may be different, or some of the exhaust pressures may be the same and some may be different.

In some embodiments, the plurality of fluid control elements 302 a-d may be, for example, valves (e.g., needle valves, globe valves, etc.), pumps (e.g., positive displacement pumps, velocity pumps, etc.), a combination of the foregoing, or some other device configured to control fluid flow through a tube. In further embodiments, each of the plurality of fluid control elements 302 a-d may be adjusted independently of one another (e.g., adjusting pump speed, adjusting valve positioning, etc.), such that the plurality of ambient environments 105 a-d may be independently controlled.

In some embodiments, the plurality of exhaust tubes 114 a-d may have different dimensions (e.g., length, inner diameter, geometry, etc.) and/or properties (e.g., chemical composition), such that a pressure difference between each of the plurality of individual exhaust outputs 116 a-d and its corresponding one of the plurality of processing zones 104 a-d may be different. Because each of the plurality of individual exhaust outputs 116 a-d are coupled to a corresponding one of the plurality of exhaust tubes 114 a-b and because each of the plurality of fluid control elements 302 a-d may be adjusted independently, even though the plurality of exhaust tubes 114 a-d may have different dimensions and/or properties, the ambient environments 105 a-d may be controlled to be substantially the same (e.g., substantially the same amount of processing fluid). Accordingly, fabrication process(es) performed in the semiconductor fabrication tool 100 may be improved between the plurality of processing zones 104 a-d (e.g., improved permittivity uniformity between piezoelectric layers formed in the plurality of processing zones 104 a-d).

FIG. 4 illustrates a view of some other embodiments of the semiconductor fabrication tool 100 of FIG. 1.

As shown in FIG. 4 each of the plurality of processing zones 104 a-d comprise a plurality of ambient environment regions 404 a-b. For example, a first ambient environment region 404 a may be disposed at a first location in the fourth processing zone 104 d, and a second ambient environment region 404 b may be disposed at a second location in the fourth processing zone 104 d different than the first location. In some embodiments, each of the plurality of ambient environment regions 404 a-b may comprise a substantially similar area of space inside the processing chamber 102 (e.g., a half of one of the plurality of processing zones 104 a-d, a quarter of one of the plurality of processing zones 104 a-d, etc.). It will be appreciated that, in some embodiments, the plurality of ambient environment regions 404 a-b may comprise any number of ambient environment regions (e.g., 3, 4, 5, etc.).

In some embodiments, each of the one or more exhaust ports 110 is disposed in one of the ambient environment regions 404 a-b. For example, a first one of the one or more exhaust ports 110 is disposed in the first ambient environment region 404 a, and a second one of the one or more exhaust ports 110 is disposed in the second ambient environment region 404 b.

In some embodiments, a plurality of exhaust port fluid control elements 402 are disposed in each of the plurality of exhaust tubes 114 a-d. Each of the plurality of exhaust port fluid control elements 402 correspond to one of the one or more exhaust ports 110. For example, a first one of the plurality of exhaust port fluid control elements 402 is disposed in a first portion of the fourth exhaust tube 114 d and corresponds to the first one of the one or more exhaust ports 110, and a second one of the plurality of exhaust port fluid control elements 402 may be disposed in a second portion of the fourth exhaust tube 114 d and correspond to the second one of the one or more exhaust ports 110.

Each of the plurality of exhaust port fluid control elements 402 is configured to control a corresponding one of the plurality of ambient environment regions 404 a-b. For example, the first one of the plurality of exhaust port fluid control elements 402 is configured to control the first ambient environment region 404 a, and the second one of the plurality of exhaust port fluid control elements 402 is configured to control the second ambient environment region 404 b. In some embodiments, the plurality of exhaust port fluid control elements 402 control the plurality of ambient environment regions 404 a-b so that each of the plurality of ambient environment regions 404 a-b comprise a substantially similar amount of the processing fluid.

In some embodiments, the plurality of exhaust port fluid control elements 402 control the plurality of ambient environment regions 404 a-b by adjusting fluid flow rates that correspond to rates in which the processing fluid flows through the one or more exhaust ports 110. For example, the first one of the plurality of exhaust port fluid control elements 402 controls the first ambient environment region 404 a by adjusting a third fluid flow rate corresponding to a rate in which the processing fluid flows from the fourth processing zone 104 d through the first one of the one or more exhaust ports 110, and the second one of the plurality of exhaust port fluid control elements 402 controls the second ambient environment region 404 b by adjusting a fourth fluid flow rate corresponding to a rate in which the processing fluid flows from the fourth processing zone 104 d through the second one of the one or more exhaust ports 110. In further embodiments, for the plurality of ambient environment regions 404 a-b to have substantially the same amount of processing fluid, the plurality of exhaust port fluid control elements 402 may be adjusted so that the fluid flow rates are the same and/or different. For example, all of the fluid flow rates may be the same, all of the fluid flow rates may be different, or some of the fluid flow rates may be the same and some may be different.

In some embodiments, the plurality of exhaust port fluid control elements 402 control the plurality of ambient environment regions 404 a-b by adjusting the exhaust pressures at the one or more exhaust ports 110. For example, the first one of the plurality of exhaust port fluid control elements 402 controls the first ambient environment region 404 a by adjusting the exhaust pressure at the first one of the one or more exhaust ports 110, and the second one of the plurality of exhaust port fluid control elements 402 controls the second ambient environment region 404 b by adjusting the exhaust pressure at the second one of the one or more exhaust ports 110. In further embodiments, for the plurality of ambient environment regions 404 a-b to have substantially the same amount of processing fluid, the plurality of exhaust port fluid control elements 402 may be adjusted so that the exhaust pressures are the same and/or different. For example, all of the exhaust pressures may be the same, all of the exhaust pressures may be different, or some of the exhaust pressures may be the same and some may be different.

In some embodiments, the plurality of exhaust port fluid control elements 402 may be, for example, valves (e.g., needle valves, globe valves, etc.), pumps (e.g., positive displacement pumps, velocity pumps, etc.), a combination of the foregoing, or some other device configured to control fluid flow through a tube. In further embodiments, each of the plurality of exhaust port fluid control elements 402 may be adjusted independently of one another (e.g., adjusting pump speed, adjusting valve positioning, etc.), such that the plurality of ambient environment regions 404 a-b may be independently controlled. Because each of the plurality of exhaust port fluid control elements 402 correspond to one of the one or more exhaust ports 110 and because each of the plurality of exhaust port fluid control elements 402 may be adjusted independently, the ambient environment regions 404 a-b may be controlled to be substantially the same (e.g., substantially the same amount of processing fluid). Accordingly, fabrication process(es) performed in the semiconductor fabrication tool 100 may be improved in each of the plurality of processing zones 104 a-d (e.g., improved permittivity uniformity across a piezoelectric layer formed in one of the plurality of processing zones 104 a-d).

FIG. 5 illustrates a view of some other embodiments of the semiconductor fabrication tool 100 of FIG. 1.

As shown in FIG. 5, the semiconductor fabrication tool 100 comprises both the plurality of fluid control elements 302 a-d and the plurality of exhaust port fluid control elements 402. Because the semiconductor fabrication tool comprises both the plurality of fluid control elements 302 a-d and the plurality of exhaust port fluid control elements 402, the fabrication process(es) performed in the semiconductor fabrication tool 100 may be further improved between the plurality of processing zones 104 a-d and in each of the plurality of processing zones 104 a-d. For example, the plurality of fluid control elements 302 a-d may be adjusted to selectively control pressures in the plurality of exhaust tubes 114 a-d, respectively, such that fluid flow rates in which the processing fluid flows from the plurality of ambient environment regions 404 a-b may be further controlled.

FIG. 6 illustrates a view of some other embodiments of the semiconductor fabrication tool 100 of FIG. 4. It will be appreciated that, in some embodiments, the semiconductor fabrication tools of FIGS. 3 and 5 may comprise similar features as illustrated in the semiconductor fabrication tool 100 of FIG. 6.

As shown in FIG. 6, the plurality of exhaust port fluid control elements 402 are controlled electronically. In some embodiments, the plurality of exhaust port fluid control elements 402 comprise a plurality of electronic actuators, respectively. In further embodiments, the plurality of electronic actuators adjust the plurality of exhaust port fluid control elements 402 (e.g., adjusting pump speed, adjusting valve positioning, etc.) based on a plurality of received electrical signals, respectively.

A plurality of sensors 602 are disposed in the plurality of ambient environment regions 404 a-b, respectively. The plurality of sensors 602 are configured to generate a plurality of first electrical signals based on properties of the semiconductor fabrication tool 100. For example, in some embodiments, the plurality of sensors 602 generate the plurality of first electrical signals based on the fluid flow rates through the one or more exhaust ports 110, respectively. In other embodiments, the plurality of sensors 602 generate the plurality of first electrical signals based on pressures inside the plurality of ambient environment regions 404 a-b, respectively. In other embodiments, the plurality of sensors 602 generate the plurality of first electrical signals based on a composition of the processing fluid inside the plurality of ambient environment regions 404 a-b, respectively. In further embodiments, the plurality of sensors 602 generate the plurality of first electrical signals in real time, such that the plurality of first electrical signals vary based on real-time changes in the properties of the semiconductor fabrication tool 100.

In some embodiments, the plurality of sensors 602 may be, for example, fluid flow sensors, pressure sensors, or the like. The plurality of sensors 602 may be mounted to the one or more exhaust ports 110, respectively. For example, one of the plurality of sensors 602 may be mounted to one of the one or more exhaust ports 110 via the sensor mounting element 208 (see, e.g., FIG. 2) of the one of the one or more exhaust ports 110.

The plurality of sensors 602 are electrically coupled to measurement circuitry 604. In some embodiments, the measurement circuitry 604 may comprise, for example, memory, a microprocessor, a power supply, and/or other computer hardware. The measurement circuitry 604 is configured to monitor the plurality of ambient environment regions 404 a-b. In further embodiments, the measurement circuitry 604 monitors the plurality of ambient environment regions 404 a-b by receiving the plurality of first electrical signals from the plurality of sensors 602 and calculating the properties of the semiconductor fabrication tool 100 based on the plurality of first electrical signals. For example, in some embodiments, the measurement circuitry 604 calculates the fluid flow rates through the one or more exhaust ports 110, respectively. In other embodiments, the measurement circuitry 604 calculates exhaust pressures at the one or more exhaust ports 110, respectively. In other embodiments, the measurement circuitry 604 calculates compositions of the processing fluid in the plurality of ambient environment regions 404 a-b, respectively.

Bias circuitry 606 is electrically coupled to the plurality of exhaust port fluid control elements 402. In some embodiments, the bias circuitry 606 is electrically coupled to the measurement circuitry 604. In some embodiments, the bias circuitry 606 may comprise, for example, memory, a microprocessor, a power supply, and/or other computer hardware. The bias circuitry 606 is configured to provide a plurality of second electrical signals to the plurality of exhaust port fluid control elements 402, respectively, such that the bias circuitry 606 may adjust each of the plurality of exhaust port fluid control elements 402. In further embodiments, the bias circuitry 606 provides the plurality of second electrical signals in real time, such that the bias circuitry 606 may adjust the plurality of exhaust port fluid control elements 402 in real time.

In some embodiments, the bias circuitry 606 provides the plurality of second electrical signals to the plurality of exhaust port fluid control elements 402, respectively, based on the properties of the semiconductor fabrication tool 100 calculated by the measurement circuitry 604. For example, the measurement circuitry 604 may provide a plurality of third electrical signals to the bias circuitry 606 based on calculated fluid flow rates though the one or more exhaust ports 110. Based on the plurality of third electrical signals, the bias circuitry 606 may provide the plurality of second electrical signals to the plurality of exhaust port fluid control elements 402, respectively, to adjust each of the plurality of exhaust port fluid control elements 402. By adjusting the plurality of exhaust port fluid control elements 402 based on the properties of the semiconductor fabrication tool 100 calculated by the measurement circuitry 604, the semiconductor fabrication tool 100 may automatically adjust the ambient environment in each of the plurality of ambient environment regions 404 a-b (or the plurality of processing zones 104 a-d) as the properties in semiconductor fabrication tool 100 change, thereby further improving the fabrication process(es) performed in each of the plurality of processing zones 104 a-d.

As illustrated in FIG. 7, a flowchart 700 of some embodiments of a method for forming a plurality of layers on a plurality of semiconductor workpieces 108, respectively, with the semiconductor fabrication tool 100 of FIG. 6 is provided. While the flowchart 700 of FIG. 7 is illustrated and described herein as a series of acts or events, it will be appreciated that the illustrated ordering of such acts or events is not to be interpreted in a limiting sense. For example, some acts may occur in different orders and/or concurrently with other acts or events apart from those illustrated and/or described herein. Further, not all illustrated acts may be required to implement one or more aspects or embodiments of the description herein, and one or more of the acts depicted herein may be carried out in one or more separate acts and/or phases.

At act 702, a first processing solution is formed on a first semiconductor workpiece and a second processing solution is formed on a second semiconductor workpiece.

In some embodiments, the first processing solution may be formed on the first semiconductor workpiece (see, e.g., FIG. 6—108) via a first deposition process (e.g., a spin-on process, a wafer dipping process, etc.). The first processing solution may be deposited on the first semiconductor workpiece outside of a processing chamber (see, e.g., FIG. 6—102) of a semiconductor fabrication tool (see, e.g., FIG. 6—100) configured to heat the first and second semiconductor workpieces. In further embodiments, the first processing solution may be deposited on a metal layer (e.g., a platinum layer) of the first semiconductor workpiece. In further embodiments, the first processing solution may comprise, for example, zirconium (Zr), titanium (Ti), and/or lead (Pb). In yet further embodiments, the first processing solution may be a first sol-gel solution.

In some embodiments, the second processing solution may be formed on the second semiconductor workpiece (see, e.g., FIG. 6—108) via a second deposition process (e.g., a spin-on process, a wafer dipping process, etc.). The second processing solution may be deposited on the second semiconductor workpiece outside of the processing chamber of the semiconductor fabrication tool. In further embodiments, the second processing solution may be deposited on a metal layer (e.g., a platinum layer) of the second semiconductor workpiece. In further embodiments, the second processing solution may comprise, for example, Zr, Ti, and/or Pb. In yet further embodiments, the second processing solution may be a second sol-gel solution.

At act 704, the first semiconductor workpiece and the second semiconductor workpiece are placed inside a processing chamber of a semiconductor fabrication tool, where the first semiconductor workpiece is placed in a first processing zone having a first ambient environment, and where the second semiconductor workpiece is placed in a second processing zone having a second ambient environment.

In some embodiments, the first semiconductor workpiece is placed in the processing tool by, for example: 1) removing a first hotplate tray (see, e.g., FIG. 2—202) comprising a first heating element (see, e.g., FIG. 6—106) from the processing chamber; 2) placing the first semiconductor workpiece onto the first heating element; and 3) loading the first hotplate tray into the first processing zone (see, e.g., FIG. 6—104 a) of the processing chamber. In some embodiments, the first hotplate tray is loaded into the first processing zone by placing the first hotplate tray onto a plurality of mounting brackets (see, e.g., FIG. 2—206) disposed in the first processing zone. In further embodiments, loading the first hotplate tray into the first processing zone may engage a first locking mechanism that aligns openings in the first hotplate tray with openings (see, e.g., FIG. 6—112) of the one or more exhaust ports (see, e.g., FIG. 6—110) disposed in the first processing zone.

In some embodiments, the second semiconductor workpiece is placed in the processing tool by, for example: 1) removing a second hotplate tray (see, e.g., FIG. 2—202) comprising a second heating element (see, e.g., FIG. 6—106) from the processing chamber; 2) placing the second semiconductor workpiece onto the second heating element; and 3) loading the second hotplate tray into the second processing zone (see, e.g., FIG. 6—104 b) of the processing chamber. In some embodiments, the second hotplate tray is loaded into the second processing zone by placing the second hotplate tray onto a plurality of mounting brackets (see, e.g., FIG. 2—206) disposed in the second processing zone. In further embodiments, loading the second hotplate tray into the second processing zone may engage a second locking mechanism that aligns openings in the second hotplate tray with openings (see, e.g., FIG. 6—112) of the one or more exhaust ports (see, e.g., FIG. 6—110) disposed in the second processing zone.

At act 706, the first semiconductor workpiece and the second semiconductor workpiece are processed by heating the first and second semiconductor workpieces to a first processing temperature for a first period of time.

In some embodiments, the first semiconductor workpiece is heated to the first processing temperature by passing a first current through the first heating element (e.g., a conductive wire). By heating the first semiconductor workpiece to the first processing temperature for the first period of time, a third processing layer is formed on the first semiconductor workpiece (e.g., via pyrolysis of the first processing solution). In further embodiments, the third processing layer may be a gel layer and comprise, for example, Zr, Ti, and/or Pb.

In some embodiments, the second semiconductor workpiece is heated to the first processing temperature by passing a second current through the second heating element (e.g., a conductive wire). By heating the second semiconductor workpiece to the first processing temperature for the first period of time, a fourth processing layer is formed on the second semiconductor workpiece (e.g., via pyrolysis of the second processing solution). In further embodiments, the fourth processing layer may be a gel layer and comprise, for example, Zr, Ti, and/or Pb.

In some embodiments, the first period of time is less than or equal to about 15 minutes. In further embodiments, the first processing temperature may be between about 200° C. and 600° C. More specifically, the first processing temperature may be about 300° C. In yet further embodiments, the first processing temperature may be a sol-gel pyrolysis temperature.

By heating the first and second semiconductor workpieces to the first processing temperature, by-products from processing the first and second semiconductor workpieces form a processing fluid that is disposed throughout the first and second ambient environments. In some embodiments, the by-products are gas-phase particles. In further embodiments, the by-products may be or comprise, for example, Zr, Ti, Pb, carbon (C), hydrogen (H), oxygen (O), or the like.

At act 708, while the first semiconductor workpiece and the second semiconductor workpiece are being processed, the first ambient environment and the second ambient environment are individually controlled to ensure the first ambient environment and the second ambient environment are substantially the same.

In some embodiments, individually controlling the first and second ambient environments to ensure the first and second ambient environments are substantially the same comprises calculating properties of the semiconductor fabrication tool. For example, a first set of properties for the first processing zone is calculated, and a second set of properties for the second processing zone is calculated. In further embodiments, the first set of properties may be fluid flow rates, exhaust pressures, processing fluid composition (e.g., an amount of by-products), and/or other properties of the first processing zone. In yet further embodiments, the second set of properties may be fluid flow rates, exhaust pressures, processing fluid composition, and/or other properties of the second processing zone.

For example, the first processing zone may comprise a first ambient environment region (see, e.g., FIG. 6—404 a) and a second ambient environment region (see, e.g., FIG. 6—404 b), which are regions of the first ambient environment. A first exhaust port (see, e.g., FIG. 6—110) may be disposed in the first ambient environment region, and a second exhaust port (see, e.g., FIG. 6—110) may be disposed in the second ambient environment region. A first sensor (see, e.g., FIG. 6—602) may be disposed in the first ambient environment region. In some embodiments, the first sensor provides a plurality of first electrical signals to measurement circuitry (see, e.g., FIG. 6—604) based on rates in which the processing fluid flows through the first exhaust port during the first period of time, such that the measurement circuitry may calculate a plurality of first fluid flow rates. A second sensor (see, e.g., FIG. 6—602) may be disposed in the second ambient environment region. In some embodiments, the second sensor provides a plurality of second electrical signals to the measurement circuitry based on rates in which the processing fluid flows through the second exhaust port during the first period of time, such that the measurement circuitry (see, e.g., FIG. 6—604) may calculate a plurality of second fluid flow rates.

The second processing zone may comprise a third ambient environment region (see, e.g., FIG. 6—404 a) and a fourth ambient environment region (see, e.g., FIG. 6—404 b), which are regions of the second ambient environment. A third exhaust port (see, e.g., FIG. 6—110) may be disposed in the third ambient environment region, and a fourth exhaust port (see, e.g., FIG. 6—110) may be disposed in the fourth ambient environment region. A third sensor (see, e.g., FIG. 6—602) may be disposed in the third ambient environment region. In some embodiments, the third sensor provides a plurality of third electrical signals to the measurement circuitry based on rates in which the processing fluid flows through the third exhaust port during the first period of time, such that the measurement circuitry may calculate a plurality of third fluid flow rates. A fourth sensor (see, e.g., FIG. 6—602) may be disposed in the fourth ambient environment region. In some embodiments, the fourth sensor provides a plurality of fourth electrical signals to the measurement circuitry based on rates in which the processing fluid flows through the fourth exhaust port during the first period of time, such that the measurement circuitry (see, e.g., FIG. 6—604) may calculate a plurality of fourth fluid flow rates.

In some embodiments, a first exhaust tube (see, e.g., FIG. 6—114 a) is coupled to the first exhaust port, the second exhaust port, and a first individual exhaust output (see, e.g., FIG. 6—116 a), such that the processing fluid may flow from the first processing zone to the first individual exhaust output. In further embodiments, the first exhaust tube comprises a first portion and a second portion that converge to the first individual exhaust output. In yet further embodiments, the first portion of the first exhaust tube is coupled to the first exhaust port, and the second portion of the first exhaust tube is coupled to the second exhaust port.

In some embodiments, a second exhaust tube (see, e.g., FIG. 6—114 b) is coupled to the third exhaust port, the fourth exhaust port, and a second individual exhaust output (see, e.g., FIG. 6—116 b), such that the processing fluid may flow from the second processing zone to the second individual exhaust output. In further embodiments, the second exhaust tube comprises a third portion and a fourth portion that converge to the second individual exhaust output. In yet further embodiments, the third portion of the second exhaust tube is coupled to the third exhaust port, and the fourth portion of the second exhaust tube is coupled to the fourth exhaust port.

Further, in some embodiments, individually controlling the first and second ambient environments to ensure the first and second ambient environments are substantially the same comprises adjusting a plurality of exhaust port fluid control elements (see, e.g., FIG. 6—402) based on the first set of properties and the second set of properties. For example, a first exhaust port fluid control element (see, e.g., FIG. 6—402) is disposed in the first portion of the first exhaust tube. The first exhaust port fluid control element is configured to control the first ambient environment region. In some embodiments, the first exhaust port fluid control element controls a rate in which the processing fluid exhausts from the first ambient environment region through the first exhaust port. In further embodiments, a second exhaust port fluid control element (see, e.g., FIG. 6—402) is disposed in the second portion of the first exhaust tube. The second one of the plurality of exhaust port fluid control element is configured to control the second ambient environment region. In yet further embodiments, the second exhaust port fluid control element controls a rate in which the processing fluid exhausts from the second ambient environment region through the second exhaust port.

In some embodiments, a third exhaust port fluid control element (see, e.g., FIG. 6—402) is disposed in the third portion of the second exhaust tube. The third exhaust port fluid control element is configured to control the third ambient environment region. For example, the third exhaust port fluid control element controls a rate in which the processing fluid exhausts from the third ambient environment region through the third exhaust port. In further embodiments, a fourth exhaust port fluid control element (see, e.g., FIG. 6—402) is disposed in the fourth portion of the fourth exhaust tube. The fourth exhaust port fluid control element is configured to control the fourth ambient environment region. For example, the fourth exhaust port fluid control element controls a rate in which the processing fluid exhausts from the fourth ambient environment region through the fourth exhaust port.

In some embodiments, bias circuitry (see, e.g., FIG. 6—606) is electrically coupled to the first, second, third, and fourth exhaust port fluid control elements and the measurement circuitry. The measurement circuitry may provide a plurality of fifth electrical signals to the bias circuitry, where the plurality of fifth electrical signals are based on calculations of the first set of properties and the second set of properties. For example, the plurality of fifth electrical signals may be based on a combination of the calculated plurality of first fluid flow rates, plurality of second fluid flow rates, plurality of third fluid flow rates, and plurality of fourth fluid flow rates.

Based on the plurality of fifth electrical signals, the bias circuitry may adjust the first, second, third, and fourth exhaust port fluid control elements, such that the first ambient environment and the second ambient environment are substantially the same. For example, the plurality of fifth electrical signals may indicate that there is a larger amount of the by-products in the first ambient environment than the second ambient environment (e.g., due to a difference in fluid flow rates through the first, second, third, and fourth exhaust ports). In addition, the plurality of fifth electrical signals may indicate that there is a larger amount of the by-products in the first ambient environment region than the second ambient environment region (e.g., due to a difference in fluid flow rates through the first and second exhaust ports).

The bias circuitry may individually adjust the first, second, third, and/or fourth fluid control elements by providing a plurality of sixth electrical signals to the first, second, third, and fourth exhaust port fluid control elements, respectively. For example, the plurality of sixth electrical signals may individually adjust the first and/or second fluid control element, such that the fluid flow rate through the second exhaust port is substantially the same as the fluid flow rate through the first exhaust port, thereby ensuring the first ambient environment region is substantially the same as the second ambient environment region. Further, the plurality of sixth electrical signals may individually adjust the third and/or fourth fluid control elements, such that the fluid flow rates through the third and fourth exhaust ports are substantially the same as the fluid flow rates through the first and second exhaust ports, thereby ensuring the first and second ambient environment regions are substantially the same. It will be appreciated that, in some embodiments, to ensure the first and second ambient environments are substantially the same, the plurality of sixth electrical signals may adjust the first, second, third, and/or fourth fluid control elements, such that the fluid flow rates through the first, second, third, and/or fourth exhaust ports are different.

In some embodiments, while the first and second semiconductor workpieces are being processed, the bias circuitry may continuously adjust the first, second, third, and/or fourth exhaust port fluid control elements to ensure the first ambient environment and the second ambient environment are substantially the same. In further embodiments, the bias circuitry may continuously adjust the first, second, third, and fourth exhaust port fluid control elements automatically (e.g., without input from an operator). In other embodiments, the first, second, third, and/or fourth exhaust port fluid control elements may be adjusted manually (e.g., by an operator).

Because the semiconductor fabrication tool may individually adjust the first, second, third, and/or fourth exhaust port fluid control elements, the first and second ambient environments (and the first, second, third, and fourth ambient environment regions) may be individually controlled. Accordingly, fabrication process(es) performed in the semiconductor fabrication tool (e.g., forming a piezoelectric layer via a sol-gel process) may be improved between (and within) the first and second processing zones (e.g., improved permittivity uniformity between piezoelectric layers formed in the first processing zone and the second processing zone, improved permittivity uniformity across a piezoelectric layer formed in the first or second processing zone, etc.)

At act 710, the first semiconductor workpiece and the second semiconductor workpiece are heated to a second processing temperature for a second period of time, such that a first layer is formed on the first semiconductor workpiece and a second layer is formed on the second semiconductor workpiece.

In some embodiments, the first semiconductor workpiece is heated to the second processing temperature by a first anneal process (e.g., rapid thermal anneal (RTA), microwave anneal, furnace anneal, etc.). By heating the first semiconductor workpiece to the second processing temperature for the second period of time, the first layer (e.g., a piezoelectric layer) may be formed on the first semiconductor workpiece (e.g., via crystallization of the first gel layer). In further embodiments, the first layer may be or comprise, for example, lead zirconate titanate (PZT), or some other piezoelectric material. In yet further embodiments, the first semiconductor workpiece may be heated to the second processing temperature outside of the processing chamber of the semiconductor fabrication tool.

In some embodiments, the second semiconductor workpiece is heated to the second processing temperature by a second anneal process (e.g., rapid thermal anneal (RTA), microwave anneal, furnace anneal, etc.). By heating the second semiconductor workpiece to the second processing temperature for the second period of time, the second layer (e.g., a piezoelectric layer) may be formed on the second semiconductor workpiece (e.g., via crystallization of the second gel layer). In further embodiments, the second layer may be or comprise, for example, lead zirconate titanate (PZT), or some other piezoelectric material. In yet further embodiments, the second semiconductor workpiece may be heated to the second processing temperature outside of the processing chamber of the semiconductor fabrication tool.

In some embodiments, the second period of time may be greater than about 60 seconds. In further embodiments, the second processing temperature may be greater than about 600° C. In further embodiments, the second processing temperature may be about 700° C. In yet further embodiments, the second processing temperature may be a sol-gel crystallization temperature. It will be appreciated that, in some embodiments, after the first and second piezoelectric layers are formed, additional layers (e.g., a metal layer, an oxide layer, a nitride layer, etc.) may be formed on/over the first and/or second layers.

In some embodiments, the present application provides a semiconductor fabrication tool. The semiconductor fabrication tool comprises a first processing zone and a second processing zone disposed at different locations inside a processing chamber. The first processing zone has a first ambient environment and the second processing zone has a second ambient environment, where gas-phase particles are disposed throughout the first and second ambient environments. A first exhaust port is disposed in the first processing zone. A first exhaust pipe is coupled to the first exhaust port and a first individual exhaust output. Further, the semiconductor fabrication tool comprises a first adjustable fluid control element that is configured to control the first ambient environment by adjusting a first fluid flow rate corresponding to a rate in which the gas-phase particles flow through the first exhaust port. A second exhaust port is disposed in the second processing zone. A second exhaust pipe is coupled to the second exhaust port and a second individual exhaust output, where the first exhaust pipe and the second exhaust pipe are separate from one another. Moreover, the semiconductor fabrication tool comprises a second adjustable fluid control element that is configured to control the second ambient environment by adjusting a second fluid flow rate corresponding to a rate in which the gas-phase particles flow through the second exhaust port, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.

In other embodiments, the present application provides a semiconductor fabrication tool. The semiconductor fabrication tool comprises a first processing zone disposed at a first location inside a processing chamber, where the first processing zone comprises a first heating element configured to heat a first semiconductor workpiece, and where a processing fluid is dispersed throughout the first processing zone. A first exhaust port and a second exhaust port are disposed in the first processing zone, where the first exhaust port and the second exhaust port are disposed at different locations in the first processing zone. A first exhaust pipe is coupled to the first exhaust port and the second exhaust port. A first port fluid control element is disposed in a first portion of the first exhaust pipe and is configured to control a first fluid flow rate that corresponds to a rate in which the processing fluid flows through the first exhaust port. A second exhaust port fluid control element is disposed in a second portion of the first exhaust pipe and is configured to control a second fluid flow rate that corresponds to a rate in which the processing fluid flows through the second exhaust port.

In yet other embodiments, the present application provides a method for forming a layer on a semiconductor workpiece. The method comprises forming a first processing solution on a first semiconductor workpiece. A second processing solution is formed on a second semiconductor workpiece. The first semiconductor workpiece is placed into a first processing zone of a processing chamber, where the first processing zone has a first ambient environment. The second semiconductor workpiece is placed into a second processing zone of the processing chamber, where the second processing zone has a second ambient environment. The first semiconductor workpiece and the second semiconductor workpiece are heated to a processing temperature for a period of time, such that by-products from the first processing solution and the second processing solution form a processing fluid that is disposed throughout the first ambient environment and the second ambient environment. During the period of time, the first ambient environment and the second ambient environment are individually controlled to ensure the first ambient environment and the second ambient environment are substantially the same.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A method, the method comprising: forming a first processing solution on a first semiconductor workpiece and a second processing solution on a second semiconductor workpiece; placing the first semiconductor workpiece into a first processing zone of a processing chamber, wherein the first processing zone has a first ambient environment; placing the second semiconductor workpiece into a second processing zone of the processing chamber, wherein the second processing zone has a second ambient environment, wherein the first and second processing zones are vertically stacked and enclosed within sidewalls of the processing chamber; heating the first semiconductor workpiece and the second semiconductor workpiece to a processing temperature for a period of time, such that by-products from the first processing solution and the second processing solution form a processing fluid that is free to move between the first ambient environment and the second ambient environment; and during the period of time, individually controlling the first ambient environment and the second ambient environment to ensure the first ambient environment and the second ambient environment are substantially the same.
 2. The method of claim 1, wherein individually controlling the first ambient environment and the second ambient environment to ensure the first ambient environment and the second ambient environment are substantially the same comprises: determining an amount of the by-products in the first ambient environment and an amount of the by-products in the second ambient environment; and based on the amount of the by-products in the first ambient environment and the amount of the by-products in the second ambient environment, adjusting a rate in which the processing fluid is exhausted from at least one of the first processing zone and the second processing zone, such that the amount of the by-products in the first ambient environment is substantially the same as the amount of the by-products in the second ambient environment.
 3. The method of claim 2, wherein adjusting the rate in which the processing fluid is exhausted from at least one of the first processing zone and the second processing zone comprises: adjusting at least one of a first exhaust port fluid control element and a second exhaust port fluid control element, wherein adjusting the first exhaust port fluid control element controls a rate in which the processing fluid exhausts from the first ambient environment to a first individual exhaust output, and wherein adjusting the second exhaust port fluid control element controls a rate in which the processing fluid exhausts from the second ambient environment to a second individual exhaust output.
 4. The method of claim 3, wherein adjusting at least one of the first exhaust port fluid control element and the second exhaust port fluid control element comprises: bias circuitry providing at least one of a first electrical signal to the first exhaust port fluid control element and a second electrical signal to the second exhaust port fluid control element.
 5. The method of claim 4, wherein determining the amount of the by-products in the first ambient environment and the amount of the by-products in the second ambient environment comprises: measurement circuitry receiving a third electrical signal from a first sensor and a fourth electrical signal from a second sensor, wherein the first sensor generates the third electrical signal based on a property of the first ambient environment, and the second sensor generates the fourth electrical signal based on a property of the second ambient environment.
 6. The method of claim 5, wherein: the property of the first ambient environment is a rate in which the processing fluid flows through a first exhaust port; the first exhaust port is disposed within the first processing zone; the property of the second ambient environment is a rate in which the processing fluid flows through a second exhaust port; and the second exhaust port is disposed in the second processing zone and vertically spaced from the first exhaust port.
 7. The method of claim 1, wherein: the first semiconductor workpiece comprises a first metal layer; the second semiconductor workpiece comprises a second metal layer; the first processing solution is formed on the first metal layer; and the second processing solution is formed on the second metal layer.
 8. The method of claim 7, wherein: the first processing solution comprises a metal; and the second processing solution comprises the metal.
 9. The method of claim 8, wherein the metal is lead, zirconium, or titanium.
 10. The method of claim 1, wherein: the first processing solution is formed on the first semiconductor workpiece via a first spin-on deposition process; and the second processing solution is formed on the second semiconductor workpiece via a second spin-on deposition process.
 11. The method of claim 1, wherein: the processing temperature is between about 200° C. and about 600° C.; and the period of time is less than or equal to about 15 minutes.
 12. A method, the method comprising: depositing a first processing solution on a first semiconductor workpiece; depositing a second processing solution on a second semiconductor workpiece; placing the first semiconductor workpiece into a first processing zone of a processing chamber, wherein the first processing zone has a first ambient environment; placing the second semiconductor workpiece into a second processing zone of the processing chamber, wherein the second processing zone has a second ambient environment, and wherein the first and second processing zones are enclosed within sidewalls of the processing chamber; heating the first semiconductor workpiece and the second semiconductor workpiece to a first processing temperature for a first period of time, thereby pyrolyzing the first processing solution into a first processing gel layer and the second processing solution into a second processing gel layer, wherein heating the first semiconductor workpiece and the second semiconductor workpiece to the first processing temperature for the first period of time causes by-products from the first processing solution and the second processing solution to form a processing fluid that is free to move between the first ambient environment and the second ambient environment; during the first period of time, individually controlling the first ambient environment and the second ambient environment, such that an amount of the by-products in the first ambient environment is substantially the same as an amount of the by-products in the second ambient environment throughout the first period of time; and heating the first semiconductor workpiece and the second semiconductor workpiece to a second processing temperature for a second period of time, thereby crystallizing the first processing gel layer into a first piezoelectric layer and the second processing gel layer into a second piezoelectric layer.
 13. The method of claim 12, wherein the second processing temperature is greater than or equal to a crystallization temperature of the first processing gel layer and a crystallization temperature of the second processing gel layer.
 14. The method of claim 13, wherein: the second processing temperature is about 700° C.; and the second period of time is greater than about 60 seconds.
 15. The method of claim 12, wherein: the first semiconductor workpiece and the second semiconductor workpiece are heated to the first processing temperature via a baking process; and the first semiconductor workpiece and the second semiconductor workpiece are heated to the second processing temperature via an anneal process.
 16. The method of claim 15, wherein the baking process comprises: passing a first current through a first heating element of a first hotplate tray; and passing a second current through a second heating element of a second hotplate tray.
 17. The method of claim 12, wherein the first and second processing zones are vertically stacked within the processing chamber.
 18. A method, the method comprising: depositing a first processing solution on a first semiconductor workpiece; depositing a second processing solution on a second semiconductor workpiece; heating the first semiconductor workpiece inside a processing chamber to a processing temperature for a period of time, wherein the first semiconductor workpiece is heated in a first processing zone of the processing chamber, and wherein the first processing zone comprises a first ambient environment and a second ambient environment; heating the second semiconductor workpiece inside the processing chamber to the processing temperature for the period of time, wherein the second semiconductor workpiece is heated in a second processing zone of the processing chamber, wherein the first processing zone and the second processing zone are vertically stacked within the processing chamber, wherein the second processing zone comprises a third ambient environment and a fourth ambient environment, and wherein heating the first semiconductor workpiece and the second semiconductor workpiece to the processing temperature causes by-products from the first processing solution and the second processing solution to form a processing fluid that is free to move between the first, second, third, and fourth ambient environments; and during the period of time, individually controlling the first ambient environment and the second ambient environment, such that an amount of the by-products in the first ambient environment is substantially the same as an amount of the by-products in the second ambient environment throughout the period of time.
 19. The method of claim 18, further comprising: during the period of time, individually controlling the third ambient environment and the fourth ambient environment, such that an amount of the by-products is substantially the same in the first, second, third, and fourth ambient environments throughout the period of time.
 20. The method of claim 19, wherein individually controlling the first, second, third, and fourth ambient environments comprises: providing a first electrical signal to a first exhaust port fluid control element to adjust a rate in which the processing fluid exhausts from the first ambient environment to a first individual exhaust output; providing a second electrical signal to a second exhaust port fluid control element to adjust a rate in which the processing fluid exhausts from the second ambient environment to the first individual exhaust output; providing a third electrical signal to a third exhaust port fluid control element to adjust a rate in which the processing fluid exhausts from the third ambient environment to a second individual exhaust output different than the first individual exhaust output; and providing a fourth electrical signal to a fourth exhaust port fluid control element to adjust a rate in which the processing fluid exhausts from the fourth ambient environment to the second individual exhaust output. 